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ElecSuper CSD18534Q5A(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
CSD18534Q5A(ES)
LCSC Part #
C53199109
Packaging
PDFN-8L(5x6)
Customer #
Key Attributes
32.8W 60V 37.1A 1.45V 9mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper CSD18534Q5A(ES)
In-Stock: 955
955 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3248$ 1.62
50+$ 0.2675$ 13.38
150+$ 0.2429$ 36.44
500+$ 0.2123$ 106.15
2,500+$ 0.1987$ 496.75
5,000+$ 0.1905$ 952.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(5x6)
Output Capacitance(Coss)370pF
Pd - Power Dissipation32.8W
Drain to Source Voltage60V
Configuration-
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)37.1A
Gate Threshold Voltage (Vgs(th))1.45V
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)915pF
Gate Charge(Qg)33nC
Vgs±20V
TypeN-Channel
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Introduction

AI Translation

CSD18534Q5A(ES) is an N-channel enhancement-mode MOSFET. It utilizes advanced shielded gate trench technology and design to achieve excellent on-resistance at low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • 60V voltage rating, RDS(ON) = 9 mΩ at VGS = 10V (typical)
  • RDS(ON) = 12 mΩ at VGS = 4.5V (typical)
  • High-density cell design for low RDS(on)
  • Halogen-free material
  • Reliable and robust
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion