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HXY MOSFET NTMT110N65S3HF-HXY
| 제조업체 | HXY MOSFETAsian Brands |
| 제조사 품번 | NTMT110N65S3HF-HXY |
| LCSC 번호 | C53134149 |
| 포장 | DFN-5B(8x8) |
| 고객 번호 | |
| 주요 제원 | 650V 37A 2.7V 185W 94mΩ@20V 1 N-channel N-Channel DFN-5B(8x8) Single FETs, MOSFETs RoHS |
| 데이터시트 |  HXY MOSFET NTMT110N65S3HF-HXY |
| 대체 부품 | 9 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN-5B(8x8) | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 37A | |
| Output Capacitance(Coss) | 55pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 185W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 94mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 767pF | |
| Gate Charge(Qg) | 35.8nC | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN-5B(8x8) | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 37A | |
| Output Capacitance(Coss) | 55pF |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 185W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 94mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 767pF | |
| Gate Charge(Qg) | 35.8nC | |
| Type | N-Channel |
오류 신고유사 제품 보기 (0) >
개요
AI 번역
This device utilizes wide-bandgap silicon carbide MOSFET technology, featuring low on-resistance with high blocking voltage, low capacitance with high-speed switching, and low reverse recovery charge. It is halogen-free and RoHS compliant. These characteristics help reduce switching losses, increase system switching frequency, improve power density, and minimize heatsink requirements. The device comes in a DFN8X8B package.
주요 특징
AI 번역
- Wide bandgap SiC MOSFET technology
- Low on-resistance and high blocking voltage
- Low capacitance and high-speed switching
- Low reverse recovery charge
- Halogen-free, RoHS compliant
응용 분야
AI 번역
- Switch-mode power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
재고 있음: 4
4 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 2.3767$ 2.1391 | $ 2.14 |
| 10+ | $ 2.0213$ 1.8192 | $ 18.19 |
| 30+ | $ 1.7976$ 1.6179 | $ 48.54 |
| 100+ | $ 1.5707$ 1.4137 | $ 141.37 |
| 500+ | $ 1.4676$ 1.3209 | $ 660.45 |
| 1,000+ | $ 1.4216$ 1.2795 | $ 1279.50 |
표준 패키지2500/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN-5B(8x8) | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 37A | |
| Output Capacitance(Coss) | 55pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 185W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 94mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 767pF | |
| Gate Charge(Qg) | 35.8nC | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | HXY MOSFET | |
| 포장 | DFN-5B(8x8) | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 37A | |
| Output Capacitance(Coss) | 55pF |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 185W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 94mΩ@20V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 767pF | |
| Gate Charge(Qg) | 35.8nC | |
| Type | N-Channel |
오류 신고유사 제품 보기 (0) >
개요
AI 번역
This device utilizes wide-bandgap silicon carbide MOSFET technology, featuring low on-resistance with high blocking voltage, low capacitance with high-speed switching, and low reverse recovery charge. It is halogen-free and RoHS compliant. These characteristics help reduce switching losses, increase system switching frequency, improve power density, and minimize heatsink requirements. The device comes in a DFN8X8B package.
주요 특징
AI 번역
- Wide bandgap SiC MOSFET technology
- Low on-resistance and high blocking voltage
- Low capacitance and high-speed switching
- Low reverse recovery charge
- Halogen-free, RoHS compliant
응용 분야
AI 번역
- Switch-mode power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| 타입 | 세부사항 |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| 타입 | 세부사항 |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
대체 부품
| MPN | 제조사 | 포장 | 재고 | 단가 | ||
|---|---|---|---|---|---|---|
| IPL65R099C7AUMA1-HXY | HXY MOSFET | DFN-5B(8x8) | 9 | $2.3379 $2.5976 | ||
| STL38N65M5-HXY | HXY MOSFET | DFN-5B(8x8) | 9 | $2.1768 $2.4186 | ||
| IPL65R115CFD7AUMA1-HXY | HXY MOSFET | DFN-5B(8x8) | 9 | $2.1768 $2.4186 | ||
| FCMT099N65S3-HXY | HXY MOSFET | DFN-5B(8x8) | 8 | $3.1031 $3.6506 | ||
| STL34N65M5-HXY | HXY MOSFET | DFN-5B(8x8) | 3 | $1.9915 $2.0963 | ||
| FCMT080N65S3-HXY | HXY MOSFET | DFN-5B(8x8) | 84 | $3.7794 $3.9783 | ||
| ST8L65N044M9-HXY | HXY MOSFET | DFN-5B(8x8) | 56 | $3.6101 $4.0112 | ||
| NTMT064N65S3H-HXY | HXY MOSFET | DFN-5B(8x8) | 4 | $4.7788 $5.9734 | ||
| NTMT095N65S3H-HXY | HXY MOSFET | DFN-5B(8x8) | 0 | $2.1782 $2.4202 |