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AGMSEMI AGM035N10C
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM035N10C |
| LCSC Part # | C5297510 |
| Packaging | TO-220C |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 160A TO-220C |
| Datasheet |  AGMSEMI AGM035N10C |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-220C | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.473nF | |
| Current - Continuous Drain(Id) | 160A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 227W | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.131nF | |
| Gate Charge(Qg) | 66nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-220C | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.473nF | |
| Current - Continuous Drain(Id) | 160A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 227W | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.131nF | |
| Gate Charge(Qg) | 66nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
AGM035N10C combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA core voltage
- Secondary-side synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
In-Stock: 95
95 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0008 | $ 1.00 |
| 10+ | $ 0.825 | $ 8.25 |
| 50+ | $ 0.7046 | $ 35.23 |
| 100+ | $ 0.6167 | $ 61.67 |
| 500+ | $ 0.5647 | $ 282.35 |
| 1,000+ | $ 0.5386 | $ 538.60 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-220C | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.473nF | |
| Current - Continuous Drain(Id) | 160A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 227W | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.131nF | |
| Gate Charge(Qg) | 66nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-220C | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.473nF | |
| Current - Continuous Drain(Id) | 160A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 227W | |
| Reverse Transfer Capacitance (Crss@Vds) | 101pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.131nF | |
| Gate Charge(Qg) | 66nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
AGM035N10C combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA core voltage
- Secondary-side synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
C5297510 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AGMH035N10C | AGMSEMI | TO-220 | 2 | $ 0.8967 | ||
| AGM025N10C | AGMSEMI | TO-220 | 18 | $1.5304 $1.6109 | ||
| AGMH022N10C | AGMSEMI | TO-220 | 130 | $1.3133 $1.3824 | ||
| AGM08T15C | AGMSEMI | TO-220 | 38 | $ 1.9689 | ||
| AGMH03N10C | AGMSEMI | TO-220 | 0 | $0.9699 $1.0209 |