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ST STGP10H60DFRoHS

Manufacturer
ST
MPN
STGP10H60DF
LCSC Part #
C5268547
Packaging
TO-220
Customer #
Key Attributes
Trench gate field-stop 600 V, 10 A high speed H series IGBT
Datasheetpdf iconST STGP10H60DF
In-Stock: 6
6 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 2.2137$ 2.21
10+$ 1.8917$ 18.92
50+$ 1.69$ 84.50
100+$ 1.4834$ 148.34
500+$ 1.3907$ 695.35
1,000+$ 1.3501$ 1350.10
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-220
Td(off)103ns
Pd - Power Dissipation115W
Td(on)19.5ns
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)30pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@250uA
Operating Temperature-55℃~+175℃
Vce Saturation(VCE(sat))1.95V@10A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)107ns
Switching Energy(Eoff)140uJ
Turn-On Energy (Eon)83uJ
Input Capacitance(Cies)1.3nF
Output Capacitance(Coes)60pF
Gate Charge(Qg)57nC@15V
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Introduction

AI Translation

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • High speed switching
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Short-circuit rated
  • Ultrafast soft recovery antiparallel diode

Applications

AI Translation
  • Motor control
  • UPS
  • PFC