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ElecSuper ESN6484 product image
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ElecSuper ESN6484RoHS

Manufacturer
ElecSuperAsian Brands
MPN
ESN6484
LCSC Part #
C5224311
Packaging
PDFN5x6-8L
Customer #
Key Attributes
MOSFET N-CH 100V 11A PDFN5x6-8L
Datasheetpdf iconElecSuper ESN6484
In-Stock: 4,693
4,693 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.2537$ 0.25
10+$ 0.1894$ 1.89
30+$ 0.1619$ 4.86
100+$ 0.1275$ 12.75
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN5x6-8L
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)91mΩ@10V;97mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)780pF
Gate Charge(Qg)19.2nC@4.5V
TypeN-Channel
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Introduction

AI Translation

ESN6484 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it features excellent RDS(ON) and low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN6484 is lead-free.

Features

AI Translation
  • 100V, RDS(ON) = 91 mΩ (typ), VGS = 10V
  • RDS(ON) = 97 mΩ (typ), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion