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ElecSuper ESN4486
| Manufacturer | ElecSuperAsian Brands |
| MPN | ESN4486 |
| LCSC Part # | C5224310 |
| Packaging | PDFN3x3-8L |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 10A PDFN3x3-8L |
| Datasheet |  ElecSuper ESN4486 |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | PDFN3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 82mΩ@10V;90mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 815pF | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | PDFN3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 82mΩ@10V;90mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 815pF | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
ESN4486 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN4486 is lead-free.
Features
AI Translation
- 100V, RDS(ON) = 82 mΩ (typical) @ VGS = 10V
- RDS(ON) = 90 mΩ (typical) @ VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Material: Halogen-free
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
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Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.1995 | $ 1.00 |
| 50+ | $ 0.149 | $ 7.45 |
| 150+ | $ 0.1273 | $ 19.10 |
| 500+ | $ 0.1003 | $ 50.15 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | PDFN3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 82mΩ@10V;90mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 815pF | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | PDFN3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 82mΩ@10V;90mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 815pF | |
| Gate Charge(Qg) | 12nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
ESN4486 is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN4486 is lead-free.
Features
AI Translation
- 100V, RDS(ON) = 82 mΩ (typical) @ VGS = 10V
- RDS(ON) = 90 mΩ (typical) @ VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Material: Halogen-free
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C5224310 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| ESGNH10R90 | ElecSuper | PDFN-8L(3x3) | 4,260 | $ 0.1522 | ||
| CSD19537Q3(ES) | ElecSuper | PDFN-8L(3x3) | 4,903 | $ 0.7459 | ||
| CSD19538Q3A(ES) | ElecSuper | PDFN-8L(3x3) | 930 | $ 0.2816 | ||
| ESGNH10R17 | ElecSuper | PDFN-8L(3x3) | 0 | $ 0.325 |