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ElecSuper BSS138DW-7-F-ES product image
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ElecSuper BSS138DW-7-F-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
BSS138DW-7-F-ES
LCSC Part #
C5224288
Packaging
SOT-363
Customer #
Key Attributes
MOSFET N-CH ARR 60V 410mA SOT-363
Datasheetpdf iconElecSuper BSS138DW-7-F-ES
In-Stock: 1,020
1,020 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
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QtyUnit PriceTotal Amount
20+$ 0.0235$ 0.47
200+$ 0.0204$ 4.08
600+$ 0.0187$ 11.22
3,000+$ 0.0163$ 48.90
9,000+$ 0.0154$ 138.60
21,000+$ 0.0149$ 312.90
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-363
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)410mA
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation417mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@10V;1.6Ω@4.5V
Number2 N-Channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)650pC@4.5V
TypeN-Channel
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Introduction

AI Translation

BSS138DW-7-F-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138DW-7-F-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.5Ω (typical) @ VGS = 10V
  • RDS(ON) = 1.6Ω (typical) @ VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion