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ElecSuper 2N7002T-HAF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
2N7002T-HAF-ES
LCSC Part #
C5224246
Packaging
SOT-523
Customer #
Key Attributes
MOSFET N-CH 60V 300mA SOT-523
Datasheetpdf iconElecSuper 2N7002T-HAF-ES
In-Stock: 80
80 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
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QtyUnit PriceTotal Amount
20+$ 0.0233$ 0.47
200+$ 0.0183$ 3.66
600+$ 0.0155$ 9.30
3,000+$ 0.0133$ 39.90
9,000+$ 0.0118$ 106.20
21,000+$ 0.011$ 231.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-523
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.85Ω@10V
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC@4.5V
TypeN-Channel
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Introduction

AI Translation

2N7002T-HAF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product 2N7002T-HAF-ES is lead-free.

Features

AI Translation
  • 60V, RDS(ON) = 1.85 Ω (typ.) @ VGS = 10V
  • RDS(ON) = 2.05 Ω (typ.) @ VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • ESD protection - HBM: 2kV
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion