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HXY MOSFET NVMFS5A140PLZWFT3G-HXY product image
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HXY MOSFET NVMFS5A140PLZWFT3G-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
NVMFS5A140PLZWFT3G-HXY
LCSC Part #
C52174745
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
200W 40V 100A 2.5V 3.1mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET NVMFS5A140PLZWFT3G-HXY
In-Stock: 23
23 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.9325$ 1.93
10+$ 1.6453$ 16.45
30+$ 1.466$ 43.98
100+$ 1.282$ 128.20
500+$ 1.1995$ 599.75
1,000+$ 1.163$ 1163.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)770pF
Pd - Power Dissipation200W
ConfigurationStandalone
Operating Temperature-55℃~+150℃
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)3.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)697pF
Number1 P-Channel
Input Capacitance(Ciss)10.733nF
Gate Charge(Qg)195nC@10V
Vgs±20V
TypeP-Channel
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Introduction

AI Translation

NVMFS5A140PLZWFT3G utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -40 V
  • ID = -100 A
  • RDS(ON) < 4.1 mΩ VGS = -10 V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply