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MDD(Microdiode Semiconductor) MDD03N10C
| Manufacturer | MDD(Microdiode Semiconductor)Asian Brands |
| MPN | MDD03N10C |
| LCSC Part # | C52118353 |
| Packaging | SOT-23-3 |
| Customer # | |
| Key Attributes | 100V 3A 89mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs |
| Datasheet | MDD(Microdiode Semiconductor) MDD03N10C |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 28pF | |
| Ciss-Input Capacitance | 810pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 28pF | |
| Ciss-Input Capacitance | 810pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using advanced power trench process technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Features
AI Translation
- Maximum R<sub>DS(on)</sub> = 120 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 3 A
- Low reverse recovery charge Q<sub>rr</sub>
- Lead-free plating
Applications
AI Translation
- Load switch
- PWM applications
- DC-DC converter
- Power management
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In-Stock: 3,460
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Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0413$ 0.0389 | $ 0.39 |
| 100+ | $ 0.0327$ 0.0308 | $ 3.08 |
| 300+ | $ 0.0284$ 0.0267 | $ 8.01 |
| 3,000+ | $ 0.0252$ 0.0237 | $ 71.10 |
| 6,000+ | $ 0.0226$ 0.0213 | $ 127.80 |
| 9,000+ | $ 0.0213$ 0.0201 | $ 180.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 28pF | |
| Ciss-Input Capacitance | 810pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23-3 | |
| Output Capacitance(Coss) | 28pF | |
| Ciss-Input Capacitance | 810pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 89mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using advanced power trench process technology. The process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Features
AI Translation
- Maximum R<sub>DS(on)</sub> = 120 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 3 A
- Low reverse recovery charge Q<sub>rr</sub>
- Lead-free plating
Applications
AI Translation
- Load switch
- PWM applications
- DC-DC converter
- Power management
C52118353 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |