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HXY MOSFET SIR170DP-T1-RE3-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | SIR170DP-T1-RE3-HXY |
| LCSC Part # | C51949338 |
| Packaging | DFN-8L(5x6) |
| Customer # | |
| Key Attributes | 176W 100V 120A 3V 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |  HXY MOSFET SIR170DP-T1-RE3-HXY |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 592pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 3.6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.102nF | |
| Gate Charge(Qg) | 69nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 592pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 3.6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.102nF | |
| Gate Charge(Qg) | 69nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The SIR170DP-T1-RE3 utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Features
AI Translation
- Drain-source voltage VDS = 100 V, drain current ID = 120 A
- On-resistance RDS(ON) < 4.4 mΩ at gate-source voltage VGS = 10 V
Applications
AI Translation
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7743 | $ 1.77 |
| 10+ | $ 1.4935 | $ 14.94 |
| 30+ | $ 1.3393 | $ 40.18 |
| 100+ | $ 1.1656 | $ 116.56 |
| 500+ | $ 1.0877 | $ 543.85 |
| 1,000+ | $ 1.052 | $ 1052.00 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 592pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 3.6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.102nF | |
| Gate Charge(Qg) | 69nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 592pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 3.6mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.102nF | |
| Gate Charge(Qg) | 69nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The SIR170DP-T1-RE3 utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Features
AI Translation
- Drain-source voltage VDS = 100 V, drain current ID = 120 A
- On-resistance RDS(ON) < 4.4 mΩ at gate-source voltage VGS = 10 V
Applications
AI Translation
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
C51949338 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |