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MSKSEMI IPG20N06S2L-50A-MS product image
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MSKSEMI IPG20N06S2L-50A-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
IPG20N06S2L-50A-MS
LCSC Part #
C51927982
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
60W 60V 35A 1.6V 11mΩ@10V 2 N-Channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI IPG20N06S2L-50A-MS
In-Stock: 500
500 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6151$ 0.5844$ 0.58
10+$ 0.5077$ 0.4824$ 4.82
30+$ 0.4557$ 0.4330$ 12.99
100+$ 0.402$ 0.3819$ 38.19
500+$ 0.371$ 0.3525$ 176.25
1,000+$ 0.3548$ 0.3371$ 337.10
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(5x6)
Output Capacitance(Coss)230pF
Pd - Power Dissipation60W
Drain to Source Voltage60V
Operating Temperature-55℃~+175℃
Configuration-
Current - Continuous Drain(Id)35A
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 N-Channel
Input Capacitance(Ciss)930pF
Gate Charge(Qg)22nC
Vgs±20V
TypeN-Channel
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Introduction

AI Translation

IPG20N06S2L-50A-MS utilizes advanced SGT MOSFET technology, featuring low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.

Features

AI Translation
  • Drain-source voltage VDS = 60V, drain current ID = 35A
  • On-resistance RDS(ON) < 14mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC power supplies
  • Synchronous rectification applications