MSKSEMI SI7336ADP-T1-GE3-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | SI7336ADP-T1-GE3-MS |
| LCSC Part # | C51927962 |
| Packaging | DFN-8L(5x6) |
| Customer # | |
| Key Attributes | 187W 30V 150A 1.2V 2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 150A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The SI7336ADP-T1-GE3 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 30V, ID = 150A
- RDS(ON) < 2.4mΩ at VGS = 10V
Applications
AI Translation
- Battery Protection - Load Switch - Uninterruptible Power Supply
In-Stock: 499
499 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6265$ 0.5952 | $ 0.60 |
| 10+ | $ 0.5045$ 0.4793 | $ 4.79 |
| 30+ | $ 0.4524$ 0.4298 | $ 12.89 |
| 100+ | $ 0.3873$ 0.3680 | $ 36.80 |
| 500+ | $ 0.358$ 0.3401 | $ 170.05 |
| 1,000+ | $ 0.3418$ 0.3248 | $ 324.80 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 340pF | |
| Pd - Power Dissipation | 187W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 150A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.345nF | |
| Gate Charge(Qg) | 56.9nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The SI7336ADP-T1-GE3 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 30V, ID = 150A
- RDS(ON) < 2.4mΩ at VGS = 10V
Applications
AI Translation
- Battery Protection - Load Switch - Uninterruptible Power Supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



