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MSKSEMI SI7114DN-T1-E3-MS product image
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MSKSEMI SI7114DN-T1-E3-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
SI7114DN-T1-E3-MS
LCSC Part #
C51908853
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
59W 30V 60A 1.2V 6mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI SI7114DN-T1-E3-MS
In-Stock: 898
898 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7502$ 0.75
10+$ 0.6119$ 6.12
30+$ 0.5435$ 16.31
100+$ 0.4752$ 47.52
500+$ 0.4345$ 217.25
1,000+$ 0.415$ 415.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(3x3)
Output Capacitance(Coss)267pF
Pd - Power Dissipation59W
ConfigurationStandalone
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))1.2V
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)210pF
Number1 N-channel
Input Capacitance(Ciss)2.295nF
Gate Charge(Qg)20nC
Vgs±20V
TypeN-Channel
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Introduction

AI Translation

The SI7114DN-T1-E3-MS employs advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = 30 V ID = 60 A
  • RDS(ON) < 8 mΩ @ VGS = 10 V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply