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MSKSEMI SI7619DN-T1-GE3-MS product image
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MSKSEMI SI7619DN-T1-GE3-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
SI7619DN-T1-GE3-MS
LCSC Part #
C51908783
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
29W 30V 25A 1V 16mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI SI7619DN-T1-GE3-MS
In-Stock: 935
935 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2888$ 0.2744$ 1.37
50+$ 0.2287$ 0.2173$ 10.87
150+$ 0.203$ 0.1929$ 28.94
500+$ 0.1709$ 0.1624$ 81.20
2,500+$ 0.1566$ 0.1488$ 372.00
5,000+$ 0.1481$ 0.1407$ 703.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(3x3)
Output Capacitance(Coss)150pF
Pd - Power Dissipation29W
ConfigurationStandalone
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)134pF
RDS(on)16mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.15nF
Gate Charge(Qg)52nC
Vgs±20V
TypeP-Channel
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Introduction

AI Translation

The SI7619DN-T1-GE3-MS utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -30V ID = -25A
  • RDS(ON)< 20 mΩ @ VGS=-10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply