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MSKSEMI SI7617DN-T1-GE3-MS product image
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MSKSEMI SI7617DN-T1-GE3-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
SI7617DN-T1-GE3-MS
LCSC Part #
C51908756
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
37W 30V 50A 1.2V 9mΩ@-10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconMSKSEMI SI7617DN-T1-GE3-MS
In-Stock: 880
880 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3673$ 1.84
50+$ 0.2935$ 14.68
150+$ 0.2618$ 39.27
500+$ 0.2224$ 111.20
2,500+$ 0.2048$ 512.00
5,000+$ 0.1942$ 971.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingDFN-8L(3x3)
Output Capacitance(Coss)310pF
Pd - Power Dissipation37W
Configuration-
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)237pF
RDS(on)9mΩ@-10V
Number1 P-Channel
Input Capacitance(Ciss)2.215nF
Gate Charge(Qg)22nC
Vgs±20V
TypeP-Channel
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Introduction

AI Translation

The SI7617DN-T1-GE3-MS employs advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -30V ID = -50A
  • RDS(ON) < 13 mΩ @ VGS = -10V

Applications

AI Translation
  • Battery Protection - Load Switch - Uninterruptible Power Supply