GOFORD G04P10HE
| Manufacturer | GOFORDAsian Brands |
| MPN | G04P10HE |
| LCSC Part # | C5162404 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 4A SOT-223 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 32nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 32nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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In-Stock: 60
60 In stock, ships now
Not recommended for new designs
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Minimum: 5Multiple: 5Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2035 | $ 1.02 |
| 50+ | $ 0.1616 | $ 8.08 |
| 150+ | $ 0.1437 | $ 21.56 |
| 500+ | $ 0.1213 | $ 60.65 |
| 2,500+ | $ 0.1114 | $ 278.50 |
| 5,000+ | $ 0.1004 | $ 502.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 32nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 32nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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C5162404 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



