LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
5% OFF
JSMSEMI FDC5614P product image
  • FDC5614P thumbnail 1
  • FDC5614P thumbnail 2
  • FDC5614P thumbnail 3
  • Pinout
  • Footprint
Images for reference only

JSMSEMI FDC5614PRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
FDC5614P
LCSC Part #
C5156057
Packaging
SOT-23-6
Customer #
Key Attributes
MOSFET P-CH 60V 3.3A SOT-23-6
Datasheetpdf iconJSMSEMI FDC5614P
In-Stock: 205
205 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2315$ 0.2200$ 1.10
50+$ 0.1792$ 0.1703$ 8.52
150+$ 0.1568$ 0.1490$ 22.35
500+$ 0.1289$ 0.1225$ 61.25
3,000+$ 0.1164$ 0.1106$ 331.80
6,000+$ 0.1089$ 0.1035$ 621.00
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingSOT-23-6
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)3.3A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)96mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.08nF
Gate Charge(Qg)15nC@10V
Report an ErrorShow similar products (0) >

Introduction

AI Translation

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Features

AI Translation
  • -60V, -3.3A, RDS(ON) = 96mΩ@VGS = -10V
  • Improved dv/dt capability
  • Fast switching
  • Green Device Available

Applications

AI Translation
  • Motor Drive
  • Power Tools
  • LED Lighting