VBsemi Elec SUD50N024-09P-E3-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | SUD50N024-09P-E3-VB |
| LCSC Part # | C5137419 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 25.8A TO-252 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.201nF | |
| Gate Charge(Qg) | 31.5nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.201nF | |
| Gate Charge(Qg) | 31.5nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Applications
AI Translation
- OR gate
- Server
- DC-DC conversion
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4033$ 0.3429 | $ 0.34 |
| 10+ | $ 0.3208$ 0.2727 | $ 2.73 |
| 30+ | $ 0.2858$ 0.2430 | $ 7.29 |
| 100+ | $ 0.2414$ 0.2052 | $ 20.52 |
| 500+ | $ 0.2176$ 0.1850 | $ 92.50 |
| 1,000+ | $ 0.2049$ 0.1742 | $ 174.20 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.201nF | |
| Gate Charge(Qg) | 31.5nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25.8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.201nF | |
| Gate Charge(Qg) | 31.5nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Applications
AI Translation
- OR gate
- Server
- DC-DC conversion
C5137419 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



