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Infineon IPP111N15N3GXKSA1
| Manufacturer | |
| MPN | IPP111N15N3GXKSA1 |
| LCSC Part # | C513207 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 214W 150V 83A 4V 11.1mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IPP111N15N3GXKSA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 378pF | |
| Pd - Power Dissipation | 214W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 83A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 11.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.23nF | |
| Gate Charge(Qg) | 41nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 378pF | |
| Pd - Power Dissipation | 214W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 83A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 11.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.23nF | |
| Gate Charge(Qg) | 41nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge x RDS(on) product (figure of merit)
- Ultra-low on-state resistance RDS(on)
- Operating temperature up to 175 °C
- Lead-free lead finish; RoHS compliant; halogen-free
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
In-Stock: 50
50 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 6.4953 | $ 6.50 |
| 10+ | $ 5.9072 | $ 59.07 |
| 30+ | $ 5.5579 | $ 166.74 |
| 100+ | $ 5.2037 | $ 520.37 |
| 500+ | $ 5.0413 | $ 2520.65 |
| 1,000+ | $ 4.9681 | $ 4968.10 |
Standard Packaging500/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 378pF | |
| Pd - Power Dissipation | 214W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 83A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 11.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.23nF | |
| Gate Charge(Qg) | 41nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 378pF | |
| Pd - Power Dissipation | 214W | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 83A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 11.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.23nF | |
| Gate Charge(Qg) | 41nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge x RDS(on) product (figure of merit)
- Ultra-low on-state resistance RDS(on)
- Operating temperature up to 175 °C
- Lead-free lead finish; RoHS compliant; halogen-free
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
C513207 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSP100N15 | HUASHUO | TO-220 | 266 | $ 1.0008 | ||
| SP015N09GHTQ | Siliup | TO-220-3L | 117 | $ 0.9138 | ||
| IPP057N15NM6AKSA1 | Infineon | TO-220-3 | 20 | $ 4.2127 | ||
| AGM15T13C | AGMSEMI | TO-220 | 2 | $ 1.0414 | ||
| OSP90N15G | OSEN | TO-220AB | 50 | $ 0.9374 | ||
| S120N15T | HL | TO-220 | 945 | $ 0.5668 | ||
| WSR180N15 | Winsok Semicon | TO-220 | 4 | $ 2.172 | ||
| WSR110N20 | Winsok Semicon | TO-220-3L | 27 | $2.4285 $5.3966 | ||
| MSE001C | MIRACLE POWER | TO-220 | 41 | $0.6841 $0.7201 | ||
| IRFB4115PBF-CN | ChipNobo | TO-220 | 0 | $ 0.9963 |