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Infineon IRF9952TRPBF
| Manufacturer | |
| MPN | IRF9952TRPBF |
| LCSC Part # | C513186 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V 3.5A 2.3A SO-8 |
| Datasheet |  Infineon IRF9952TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 190pF | |
| Gate Charge(Qg) | 14nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 190pF | |
| Gate Charge(Qg) | 14nC@10V |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Features
- Generation V Technology
- Ultra Low On-Resistance
- Dual N and P Channel MOSFET
- Surface Mount
- Very Low Gate Charge and Switching Losses
- Fully Avalanche Rated
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6548 | $ 0.65 |
| 10+ | $ 0.5427 | $ 5.43 |
| 30+ | $ 0.4874 | $ 14.62 |
| 100+ | $ 0.4322 | $ 43.22 |
| 500+ | $ 0.3526 | $ 176.30 |
| 1,000+ | $ 0.3347 | $ 334.70 |
Standard Packaging4000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 190pF | |
| Gate Charge(Qg) | 14nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3.5A;2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 190pF | |
| Gate Charge(Qg) | 14nC@10V |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Features
- Generation V Technology
- Ultra Low On-Resistance
- Dual N and P Channel MOSFET
- Surface Mount
- Very Low Gate Charge and Switching Losses
- Fully Avalanche Rated
- Lead-Free
C513186 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMS4612A | Cmos | SOP-8 | 120 | $0.1729 $0.182 | ||
| IRF7309TR(UMW) | UMW | SOP-8 | 700 | $ 0.1921 | ||
| IRF7319TR(UMW) | UMW | SOP-8 | 2,215 | $ 0.1579 | ||
| IRF7389TR(UMW) | UMW | SOP-8 | 120 | $ 0.1387 | ||
| IRF7343TR(UMW) | UMW | SOP-8 | 90 | $ 0.1951 | ||
| IRF7319TRPBF | TECH PUBLIC | SOP-8 | 1,210 | $ 0.2602 | ||
| SI4559ADY-T1-E3-VB | VBsemi Elec | SO-8 | 594 | $0.5079 $0.5975 | ||
| FDS4559-NL-VB | VBsemi Elec | SO-8 | 41 | $0.5304 $0.624 | ||
| BSO612CVG-VB | VBsemi Elec | SO-8 | 40 | $0.5520 $0.6494 | ||
| ZXMC4559DN8TA | DIODES | SO-8 | 0 | $ 1.0122 |