TECH PUBLIC AO3401A
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | AO3401A |
| LCSC Part # | C5122001 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 30V 4.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 55mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 8.5nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This power MOSFET is fabricated using advanced planar stripe DMOS technology. This state-of-the-art technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideally suited for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.
Features
- VDS = -30V, ID = -4.2A
- RDS(ON) < 90mΩ @ VGS = -2.5V
- RDS(ON) < 75mΩ @ VGS = -4.5V
- RDS(ON) < 55mΩ @ VGS = -10V
Applications
- Load/power switch
- Interface switch
- Battery management for ultra-compact portable devices
- Logic level translation
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.045 | $ 0.90 |
| 200+ | $ 0.035 | $ 7.00 |
| 600+ | $ 0.0295 | $ 17.70 |
| 3,000+ | $ 0.0242 | $ 72.60 |
| 9,000+ | $ 0.0213 | $ 191.70 |
| 21,000+ | $ 0.0198 | $ 415.80 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 55mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 8.5nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This power MOSFET is fabricated using advanced planar stripe DMOS technology. This state-of-the-art technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideally suited for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.
Features
- VDS = -30V, ID = -4.2A
- RDS(ON) < 90mΩ @ VGS = -2.5V
- RDS(ON) < 75mΩ @ VGS = -4.5V
- RDS(ON) < 55mΩ @ VGS = -10V
Applications
- Load/power switch
- Interface switch
- Battery management for ultra-compact portable devices
- Logic level translation
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



