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HXY MOSFET AO3400RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
AO3400
LCSC Part #
C51042779
Packaging
SOT-89
Customer #
Key Attributes
2.5W 30V 6A 900mV 20mΩ@10V 1 N-channel N-Channel SOT-89 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET AO3400
In-Stock: 80
80 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0449$ 0.45
100+$ 0.0358$ 3.58
300+$ 0.0313$ 9.39
1,000+$ 0.0279$ 27.90
5,000+$ 0.0251$ 125.50
10,000+$ 0.0238$ 238.00
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-89
Output Capacitance(Coss)56pF
Pd - Power Dissipation2.5W
Operating Temperature-55℃~+150℃
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)6A
Gate Threshold Voltage (Vgs(th))900mV
RDS(on)20mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)602pF
Gate Charge(Qg)4.8nC
Vgs±12V
TypeN-Channel

Introduction

AI Translation

The AO3400 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 30V, Drain Current (ID) = 6A
  • RDS(ON) < 28mΩ at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply