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VISHAY SI7611DN-T1-GE3
| Manufacturer | |
| MPN | SI7611DN-T1-GE3 |
| LCSC Part # | C506599 |
| Packaging | PowerPAK1212-8 |
| Customer # | |
| Key Attributes | 40V 9.3A 3.7W 25mΩ@10V 1 P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS |
| Datasheet |  VISHAY SI7611DN-T1-GE3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 3.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.98nF | |
| Gate Charge(Qg) | 41nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.98nF | |
| Gate Charge(Qg) | 41nC@10V |
Introduction
P-Channel 40 V (D-S) MOSFET, TrenchFET power MOSFET in a low thermal resistance PowerPAK 1212-8 package with a small footprint and low profile of 1.07 mm. The PowerPAK 1212-8 is a derivative of the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a direct low-resistance thermal path to the mounting substrate, delivering thermal performance on par with the PowerPAK SO-8. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, with more than twice the die capacity of standard TSOP-6. Thermal performance is an order of magnitude better than SO-8 and 20× better than TSSOP-8. It can leverage the heat dissipation capability of any PCB and improves die efficiency by approximately 20% compared to TSSOP-8. Single and dual PowerPAK 1212-8 share the same pinout as single and dual PowerPAK SO-8, and the low 1.05 mm profile makes it suitable for space-constrained applications.
Features
- TrenchFET power MOSFET
- Low thermal resistance PowerPAK package, compact size with low profile of 1.07 mm
- 100% Rg and UIS tested
Applications
- Load Switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.6124 | $ 2.61 |
| 10+ | $ 2.3119 | $ 23.12 |
| 30+ | $ 2.1234 | $ 63.70 |
| 100+ | $ 1.9301 | $ 193.01 |
| 500+ | $ 1.8424 | $ 921.20 |
| 1,000+ | $ 1.805 | $ 1805.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 3.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.98nF | |
| Gate Charge(Qg) | 41nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK1212-8 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 9.3A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.98nF | |
| Gate Charge(Qg) | 41nC@10V |
Introduction
P-Channel 40 V (D-S) MOSFET, TrenchFET power MOSFET in a low thermal resistance PowerPAK 1212-8 package with a small footprint and low profile of 1.07 mm. The PowerPAK 1212-8 is a derivative of the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a direct low-resistance thermal path to the mounting substrate, delivering thermal performance on par with the PowerPAK SO-8. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, with more than twice the die capacity of standard TSOP-6. Thermal performance is an order of magnitude better than SO-8 and 20× better than TSSOP-8. It can leverage the heat dissipation capability of any PCB and improves die efficiency by approximately 20% compared to TSSOP-8. Single and dual PowerPAK 1212-8 share the same pinout as single and dual PowerPAK SO-8, and the low 1.05 mm profile makes it suitable for space-constrained applications.
Features
- TrenchFET power MOSFET
- Low thermal resistance PowerPAK package, compact size with low profile of 1.07 mm
- 100% Rg and UIS tested
Applications
- Load Switch
C506599 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |