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GOODWORK AO3407A product image
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GOODWORK AO3407ARoHS

Manufacturer
GOODWORKAsian Brands
MPN
AO3407A
LCSC Part #
C50581527
Packaging
SOT-23-3L
Customer #
Key Attributes
MOSFET P-CH 30V 4.2A SOT-23-3L
Datasheetpdf iconGOODWORK AO3407A
In-Stock: 11,290
11,290 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0422$ 0.42
100+$ 0.0336$ 3.36
300+$ 0.0293$ 8.79
3,000+$ 0.0261$ 78.30
6,000+$ 0.0236$ 141.60
9,000+$ 0.0223$ 200.70
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOODWORK
PackagingSOT-23-3L
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4.2A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.5W
RDS(on)41mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)56pF
Number1 P-Channel
Input Capacitance(Ciss)530pF
Gate Charge(Qg)6.8nC@15V
TypeP-Channel
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Introduction

AI Translation

AO3407A is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. AO3407A is RoHS compliant, meets green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • Green and eco-friendly device
  • Ultra-low gate charge
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology
  • Drain-source voltage (V_DSS): -30 V
  • Drain current (I_D): -4.2 A
  • On-resistance (RDS(ON)): 41 mΩ