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VBsemi Elec FDN5618P-B8-VB product image
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VBsemi Elec FDN5618P-B8-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
FDN5618P-B8-VB
LCSC Part #
C50387003
Packaging
SOT-23
Customer #
Key Attributes
27W 60V 5.2A 1V 50mΩ@-10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconVBsemi Elec FDN5618P-B8-VB
In-Stock: 10
10 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.3736$ 0.3550$ 1.78
50+$ 0.3006$ 0.2856$ 14.28
150+$ 0.2693$ 0.2559$ 38.39
500+$ 0.2303$ 0.2188$ 109.40
3,000+$ 0.2129$ 0.2023$ 606.90
6,000+$ 0.2025$ 0.1924$ 1154.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSOT-23
Output Capacitance(Coss)170pF
Pd - Power Dissipation27W
Drain to Source Voltage60V
Operating Temperature-55℃~+175℃
Configuration-
Current - Continuous Drain(Id)5.2A
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)50mΩ@-10V
Number1 P-Channel
Input Capacitance(Ciss)270pF
Gate Charge(Qg)12nC
Vgs±20V
TypeP-Channel
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Features

AI Translation
  • Isolated package
  • High-voltage isolation = 2.5 kV<sub>RMS</sub> (t = 60 s; f = 60 Hz)
  • Drain-to-pin creepage distance = 4.8 mm
  • P-channel
  • Operating temperature 175 °C
  • Dynamic dV/dt rating
  • Low thermal resistance
  • Lead-free and leaded versions available