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Nexperia BUK7J1R0-40HX
| Manufacturer | |
| MPN | BUK7J1R0-40HX |
| LCSC Part # | C503359 |
| Packaging | LFPAK56E-4 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 220A LFPAK56E-4 |
| Datasheet |  Nexperia BUK7J1R0-40HX |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 7 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56E-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss@Vds) | 679pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.34nF | |
| Gate Charge(Qg) | 131nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56E-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss@Vds) | 679pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.34nF | |
| Gate Charge(Qg) | 131nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Features
AI Translation
- Fully automotive qualified to AEC-Q101
- 175 °C rating suitable for thermally demanding environments
- Trench 9 Superjunction technology:
- Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint
- Improved SOA and avalanche capability compared to standard TrenchMOS
- Tight VGS(th) limits enable easy paralleling of MOSFETs
- LFPAK Gull Wing leads:
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joint
- LFPAK copper clip technology:
- Improved reliability, with reduced Rth and RDSon
- Increases maximum current capability and improved current spreading
Applications
AI Translation
- 12 V automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
In-Stock: 23
23 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.4099 | $ 1.41 |
| 10+ | $ 1.2199 | $ 12.20 |
| 30+ | $ 1.1175 | $ 33.53 |
| 100+ | $ 0.999 | $ 99.90 |
| 500+ | $ 0.947 | $ 473.50 |
| 1,500+ | $ 0.9242 | $ 1386.30 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56E-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss@Vds) | 679pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.34nF | |
| Gate Charge(Qg) | 131nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56E-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss@Vds) | 679pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.34nF | |
| Gate Charge(Qg) | 131nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Features
AI Translation
- Fully automotive qualified to AEC-Q101
- 175 °C rating suitable for thermally demanding environments
- Trench 9 Superjunction technology:
- Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint
- Improved SOA and avalanche capability compared to standard TrenchMOS
- Tight VGS(th) limits enable easy paralleling of MOSFETs
- LFPAK Gull Wing leads:
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joint
- LFPAK copper clip technology:
- Improved reliability, with reduced Rth and RDSon
- Increases maximum current capability and improved current spreading
Applications
AI Translation
- 12 V automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
C503359 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| VBGED1401 | VBsemi Elec | LFPAK56 | 190 | $ 1.6191 | ||
| HSMA4086 | HUASHUO | LFPRAK-8(5x6) | 25 | $ 1.0534 | ||
| BUK9J0R9-40HX | Nexperia | LFPAK56E-4 | 0 | $ 3.0135 | ||
| PSMN1R0-40YSHX | Nexperia | LFPAK56E-4 | 0 | $ 4.3886 | ||
| PSMN1R0-40ULDX | Nexperia | LFPAK56E-4 | 0 | $ 1.8313 | ||
| PSMNR90-40YLHX | Nexperia | LFPAK56E-4 | 0 | $ 8.1947 | ||
| NVMYS1D2N04CLTWG | onsemi | LFPAK56E-4 | 0 | $ 2.4817 |