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NCE NCE65TF099T product image
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NCE NCE65TF099TRoHS

Manufacturer
NCEAsian Brands
MPN
NCE65TF099T
LCSC Part #
C502878
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 650V 38A TO-247
Datasheetpdf iconNCE NCE65TF099T
In-Stock: 64
64 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.6671$ 2.67
10+$ 2.2215$ 22.22
30+$ 1.9444$ 58.33
90+$ 1.6593$ 149.34
510+$ 1.5312$ 780.91
1,200+$ 1.4745$ 1769.40
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-247
Drain to Source Voltage650V
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation322W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)89mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
Gate Charge(Qg)55nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

AI Translation
  • Optimized body diode reverse recovery performance
  • Low on-resistance and low conduction losses
  • Small package
  • Ultra Low Gate Charge cause lower driving requirements
  • 100% Avalanche Tested
  • ROHS compliant

Applications

AI Translation
  • Power factor correction（PFC）
  • Switched mode power supplies(SMPS)
  • Uninterruptible Power Supply（UPS）
  • LLC Half-bridge