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Infineon IRGP4062DPBFRoHS

Manufacturer
Infineon
MPN
IRGP4062DPBF
LCSC Part #
C500538
Packaging
TO-247AC-3
Customer #
Key Attributes
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA FAST SOFT RECOVERY DIODE
Datasheetpdf iconInfineon IRGP4062DPBF
In-Stock: 1,540
1,540 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.3298$ 2.33
10+$ 2.0536$ 20.54
25+$ 1.8814$ 47.04
100+$ 1.7027$ 170.27
550+$ 1.623$ 892.65
1,100+$ 1.5889$ 1747.79
Standard Packaging25/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247AC-3
Pd - Power Dissipation250W
Td(off)104ns
Td(on)41ns
Current - Collector(Ic)48A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)45pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@700uA
Operating Temperature-55℃~+175℃
Vce Saturation(VCE(sat))1.95V@24A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)89ns
Switching Energy(Eoff)600uJ
Turn-On Energy (Eon)115uJ
Input Capacitance(Cies)1.49nF
Gate Charge(Qg)50nC@15V
Output Capacitance(Coes)129pF
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Features

AI Translation
  • Low VCE(ON) Trench IGBT Technology
  • Low switching losses
  • Maximum Junction temperature 175℃
  • 5 μS short circuit SOA
  • Square RBSOA
  • 100% of the parts tested for ILM
  • Positive VCE(ON) Temperature co - efficient
  • Ultra fast soft Recovery Co - Pak Diode
  • Tight parameter distribution
  • Lead Free Package