pSemi PE42520C-Z
| Manufacturer | |
| MPN | PE42520C-Z |
| LCSC Part # | C500478 |
| Packaging | QFN-16-EP(3x3) |
| Customer # | |
| Key Attributes | 9kHz-13GHzSPDTAbsorptiveRFSwitch |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~13GHz | |
| Features | Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~13GHz |
| Type | Description | |
|---|---|---|
| Features | Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with higher power handling of 36 dBm continuous wave (CW) and 38 dBm instantaneous power in 50Ω @ 8 GHz. The PE42520 exhibits high isolation, fast settling time, and is offered in a 3×3 mm QFN package. The PE42520 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- HaRP technology enhanced
- Fast settling time
- No gate and phase lag
- No drift in insertion loss and phase
- High power handling @ 8 GHz in 50Ω
- 36 dBm CW
- 38 dBm instantaneous power
- 26 dBm terminated port
- High linearity 66 dBm IIP3
- Low insertion loss
- 0.8 dB @ 3 GHz
- 0.9 dB @ 10 GHz
- 2.0 dB @ 13 GHz
- High isolation
- 45 dB @ 3 GHz
- 31 dB @ 10 GHz
- 18 dB @ 13 GHz
- ESD performance
- 4 kV HBM on RF pins to GND
- 2.5 kV HBM on all pins
- 1 kV CDM on all pins
Applications
- Test/ATE
- High performance wireless applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.7342 | $ 7.73 |
| 10+ | $ 6.6833 | $ 66.83 |
| 30+ | $ 6.0423 | $ 181.27 |
| 100+ | $ 5.5054 | $ 550.54 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~13GHz | |
| Features | Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~13GHz |
| Type | Description | |
|---|---|---|
| Features | Integrated control logic | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with higher power handling of 36 dBm continuous wave (CW) and 38 dBm instantaneous power in 50Ω @ 8 GHz. The PE42520 exhibits high isolation, fast settling time, and is offered in a 3×3 mm QFN package. The PE42520 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- HaRP technology enhanced
- Fast settling time
- No gate and phase lag
- No drift in insertion loss and phase
- High power handling @ 8 GHz in 50Ω
- 36 dBm CW
- 38 dBm instantaneous power
- 26 dBm terminated port
- High linearity 66 dBm IIP3
- Low insertion loss
- 0.8 dB @ 3 GHz
- 0.9 dB @ 10 GHz
- 2.0 dB @ 13 GHz
- High isolation
- 45 dB @ 3 GHz
- 31 dB @ 10 GHz
- 18 dB @ 13 GHz
- ESD performance
- 4 kV HBM on RF pins to GND
- 2.5 kV HBM on all pins
- 1 kV CDM on all pins
Applications
- Test/ATE
- High performance wireless applications
C500478 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



