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EDA ModelsEasyEDA
GOFORD GT650P20M
| Manufacturer | GOFORDAsian Brands |
| MPN | GT650P20M |
| LCSC Part # | C49576335 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET P-CH 200V 50A TO-263 |
| Datasheet |  GOFORD GT650P20M |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Pd - Power Dissipation | 320W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 51mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.9nF | |
| Gate Charge(Qg) | 116nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 320W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 51mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.9nF | |
| Gate Charge(Qg) | 116nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Pd - Power Dissipation | 320W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 51mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.9nF | |
| Gate Charge(Qg) | 116nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 320W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 51mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.9nF | |
| Gate Charge(Qg) | 116nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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C49576335 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |