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DOINGTER SUD50N06-09L-E3-DORoHS

Manufacturer
DOINGTERAsian Brands
MPN
SUD50N06-09L-E3-DO
LCSC Part #
C49237811
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 50A TO-252
Datasheetpdf iconDOINGTER SUD50N06-09L-E3-DO
In-Stock: 225
225 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1262$ 0.63
50+$ 0.0999$ 5.00
150+$ 0.0868$ 13.02
500+$ 0.0769$ 38.45
2,500+$ 0.0691$ 172.75
5,000+$ 0.0651$ 325.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Drain to Source Voltage60V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation75W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)1.928nF
Gate Charge(Qg)47nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 60 V, drain current (ID) = 50 A, on-resistance (RDS(ON)) < 15 mΩ at gate-source voltage (VGS) = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation performance

Applications

AI Translation
  • Switching and Synchronous Rectification - Brushless DC Motor (BLDC)