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DOINGTER STD26P3LLH6-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | STD26P3LLH6-DO |
| LCSC Part # | C49237808 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 30A TO-252 |
| Datasheet |  DOINGTER STD26P3LLH6-DO |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 31.3W | |
| RDS(on) | 19mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31.3W | |
| RDS(on) | 19mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -30 V, ID = -30 A, RDS(ON) < 25 mΩ (at VGS = -10 V) (typical: 19 mΩ)
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell-density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation.
- MSL3
In-Stock: 2,885
2,885 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.094 | $ 0.47 |
| 50+ | $ 0.0749 | $ 3.75 |
| 150+ | $ 0.0654 | $ 9.81 |
| 500+ | $ 0.0582 | $ 29.10 |
| 2,500+ | $ 0.0524 | $ 131.00 |
| 5,000+ | $ 0.0496 | $ 248.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 31.3W | |
| RDS(on) | 19mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31.3W | |
| RDS(on) | 19mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -30 V, ID = -30 A, RDS(ON) < 25 mΩ (at VGS = -10 V) (typical: 19 mΩ)
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell-density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation.
- MSL3
C49237808 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
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