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DOINGTER STD30PF03L-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | STD30PF03L-DO |
| LCSC Part # | C49237807 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 40A TO-252 |
| Datasheet |  DOINGTER STD30PF03L-DO |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 40A | |
| Output Capacitance(Coss) | 159pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 39W | |
| RDS(on) | 11mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 144pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.229nF | |
| Gate Charge(Qg) | 26.3nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 40A | |
| Output Capacitance(Coss) | 159pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 39W | |
| RDS(on) | 11mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 144pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.229nF | |
| Gate Charge(Qg) | 26.3nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -30 V, ID = -40 A, RDS(ON) < 14.5 mΩ (at VGS = -10 V)
- Low gate charge.
- Eco-friendly device options available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with good thermal dissipation performance.
In-Stock: 1,180
1,180 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1002 | $ 0.50 |
| 50+ | $ 0.0793 | $ 3.97 |
| 150+ | $ 0.0688 | $ 10.32 |
| 500+ | $ 0.0609 | $ 30.45 |
| 2,500+ | $ 0.0546 | $ 136.50 |
| 5,000+ | $ 0.0514 | $ 257.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 40A | |
| Output Capacitance(Coss) | 159pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 39W | |
| RDS(on) | 11mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 144pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.229nF | |
| Gate Charge(Qg) | 26.3nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 40A | |
| Output Capacitance(Coss) | 159pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 39W | |
| RDS(on) | 11mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 144pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.229nF | |
| Gate Charge(Qg) | 26.3nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET employs advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -30 V, ID = -40 A, RDS(ON) < 14.5 mΩ (at VGS = -10 V)
- Low gate charge.
- Eco-friendly device options available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with good thermal dissipation performance.
C49237807 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DOD425 | DOINGTER | TO-252 | 2,500 | $ 0.106 | ||
| NTD25P03L-DO | DOINGTER | TO-252 | 1,430 | $ 0.1036 | ||
| DOD40P03 | DOINGTER | TO-252 | 16,745 | $ 0.1204 | ||
| DC015P2G | DOINGTER | TO-252 | 1,975 | $0.0885 $0.0962 | ||
| DD013PG | DOINGTER | TO-252 | 455 | $ 0.1835 | ||
| DOD4189 | DOINGTER | TO-252 | 2,315 | $ 0.1325 | ||
| DOD65P04 | DOINGTER | TO-252 | 555 | $ 0.2263 | ||
| DC010PG-B | DOINGTER | TO-252 | 1,220 | $0.1323 $0.1438 | ||
| IPD042P03L3 G-DO | DOINGTER | TO-252 | 5,005 | $ 0.1774 | ||
| DOD403 | DOINGTER | TO-252 | 2,345 | $ 0.1243 |