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TECH PUBLIC CSD18543Q3AT-TPRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
CSD18543Q3AT-TP
LCSC Part #
C49230903
Packaging
PDFN-8(3x3)
Customer #
Key Attributes
MOSFET 60V 30A PDFN-8(3x3)
Datasheetpdf iconTECH PUBLIC CSD18543Q3AT-TP
In-Stock: 160
160 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3328$ 1.66
50+$ 0.2605$ 13.03
150+$ 0.2296$ 34.44
500+$ 0.1909$ 95.45
2,500+$ 0.1737$ 434.25
5,000+$ 0.1634$ 817.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingPDFN-8(3x3)
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)930pF
Gate Charge(Qg)22nC@10V
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance RDS(on) with low gate charge, making it suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage VDS = 60 V, drain current ID = 80 A, on-resistance RDS(ON) < 6.5 mΩ at gate-source voltage VGS = 10 V (typical: 5.5 mΩ)
  • Low gate charge
  • RoHS-compliant devices available
  • Ultra-low RDS(ON) achieved with advanced high cell density trench technology
  • Excellent package thermal dissipation
  • Moisture Sensitivity Level 3 (MSL3)

Applications

AI Translation
  • Load Switch - High-Frequency Switching & Synchronous Rectification - Battery Protection - Uninterruptible Power Supply