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ElecSuper CSD18543Q3A(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
CSD18543Q3A(ES)
LCSC Part #
C49108752
Packaging
PDFN-8L(3x3)
Customer #
Key Attributes
MOSFET N-CH 60V 55A PDFN-8L(3x3)
Datasheetpdf iconElecSuper CSD18543Q3A(ES)
In-Stock: 1,135
1,135 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3035$ 1.52
50+$ 0.2381$ 11.91
150+$ 0.2101$ 31.52
500+$ 0.1751$ 87.55
2,500+$ 0.1596$ 399.00
5,000+$ 0.1502$ 751.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingPDFN-8L(3x3)
Drain to Source Voltage60V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)198pF
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)167pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.034nF
Gate Charge(Qg)77nC@10V
TypeN-Channel
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Introduction

AI Translation

CSD18543Q3A(ES) is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product CSD18543Q3A(ES) is lead-free.

Features

AI Translation
  • 60V, R DS(ON) = 7mΩ (typ.) at VGS = 10V
  • R DS(ON) = 8.7mΩ (typ.) at VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion