HXY MOSFET IRGP4063DPBF-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IRGP4063DPBF-HXY |
| LCSC Part # | C49003310 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | 300W 100A 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Td(off) | 122ns | |
| Pd - Power Dissipation | 300W | |
| Td(on) | 24ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 92pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 98ns | |
| Switching Energy(Eoff) | 1.14mJ | |
| Turn-On Energy (Eon) | 1.38mJ | |
| Input Capacitance(Cies) | 3.363nF | |
| Gate Charge(Qg) | 179nC@15V | |
| Output Capacitance(Coes) | 206pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Td(off) | 122ns | |
| Pd - Power Dissipation | 300W | |
| Td(on) | 24ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 92pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 98ns | |
| Switching Energy(Eoff) | 1.14mJ | |
| Turn-On Energy (Eon) | 1.38mJ | |
| Input Capacitance(Cies) | 3.363nF | |
| Gate Charge(Qg) | 179nC@15V | |
| Output Capacitance(Coes) | 206pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
IRGP4063DPBF employs advanced trench and field-stop technology to reduce conduction losses, improve switching performance, and enhance avalanche energy capability.
Features
AI Translation
- Positive temperature coefficient
- Fast switching
- Low V<sub>CE(sat)</sub>
- Reliable and durable
- Available in halogen-free and green devices
- RoHS compliant
Applications
AI Translation
- Uninterruptible power supply
- Motor drive
- Boost circuit
- Portable power station
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.6201 | $ 2.62 |
| 10+ | $ 2.2549 | $ 22.55 |
| 30+ | $ 2.026 | $ 60.78 |
| 90+ | $ 1.7922 | $ 161.30 |
| 510+ | $ 1.6867 | $ 860.22 |
| 990+ | $ 1.6396 | $ 1623.20 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Td(off) | 122ns | |
| Pd - Power Dissipation | 300W | |
| Td(on) | 24ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 92pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 98ns | |
| Switching Energy(Eoff) | 1.14mJ | |
| Turn-On Energy (Eon) | 1.38mJ | |
| Input Capacitance(Cies) | 3.363nF | |
| Gate Charge(Qg) | 179nC@15V | |
| Output Capacitance(Coes) | 206pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-247 | |
| Td(off) | 122ns | |
| Pd - Power Dissipation | 300W | |
| Td(on) | 24ns | |
| Current - Collector(Ic) | 100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 92pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 98ns | |
| Switching Energy(Eoff) | 1.14mJ | |
| Turn-On Energy (Eon) | 1.38mJ | |
| Input Capacitance(Cies) | 3.363nF | |
| Gate Charge(Qg) | 179nC@15V | |
| Output Capacitance(Coes) | 206pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
IRGP4063DPBF employs advanced trench and field-stop technology to reduce conduction losses, improve switching performance, and enhance avalanche energy capability.
Features
AI Translation
- Positive temperature coefficient
- Fast switching
- Low V<sub>CE(sat)</sub>
- Reliable and durable
- Available in halogen-free and green devices
- RoHS compliant
Applications
AI Translation
- Uninterruptible power supply
- Motor drive
- Boost circuit
- Portable power station
C49003310 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



