HXY MOSFET IRF9332TRPBF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Output Capacitance(Coss)	183pF
Pd - Power Dissipation	3.7W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	11A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	156pF
RDS(on)	13mΩ@10V
Number	1 P-Channel
Input Capacitance(Ciss)	1.33nF
Gate Charge(Qg)	22nC@10V
Vgs	±20V
Type	P-Channel

In-Stock: 485

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Qty	Unit Price	Total Amount
5+	$ 0.3858$ 0.3280	$ 1.64
50+	$ 0.3028$ 0.2574	$ 12.87
150+	$ 0.2686$ 0.2284	$ 34.26
500+	$ 0.2149$ 0.1827	$ 91.35
3,000+	$ 0.1954$ 0.1661	$ 498.30
6,000+	$ 0.184$ 0.1564	$ 938.40
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Output Capacitance(Coss)	183pF
Pd - Power Dissipation	3.7W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	11A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Reverse Transfer Capacitance (Crss@Vds)	156pF
RDS(on)	13mΩ@10V
Number	1 P-Channel
Input Capacitance(Ciss)	1.33nF
Gate Charge(Qg)	22nC@10V
Vgs	±20V
Type	P-Channel