baocheng AO3404A
| Manufacturer | baochengAsian Brands |
| MPN | AO3404A |
| LCSC Part # | C48678026 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.8A SOT-23 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | baocheng | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | baocheng | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Source Voltage (VDS) = 30V
- Drain Current (Ib) = 5.8 A, Gate-Source Voltage (VGS) = 10 V
- On-State Resistance (RDS(ON)) < 25 mΩ (VGS = 10V)
- On-State Resistance (RDS(ON)) < 36 mΩ (VGS = 4.5 V)
Applications
AI Translation
- PWM applications
- Load switching
- Mobile phone battery charging
In-Stock: 2,340
2,340 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0319$ 0.0304 | $ 0.61 |
| 200+ | $ 0.0246$ 0.0234 | $ 4.68 |
| 600+ | $ 0.0205$ 0.0195 | $ 11.70 |
| 3,000+ | $ 0.0181$ 0.0172 | $ 51.60 |
| 9,000+ | $ 0.016$ 0.0152 | $ 136.80 |
| 21,000+ | $ 0.0149$ 0.0142 | $ 298.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | baocheng | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | baocheng | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 36mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Source Voltage (VDS) = 30V
- Drain Current (Ib) = 5.8 A, Gate-Source Voltage (VGS) = 10 V
- On-State Resistance (RDS(ON)) < 25 mΩ (VGS = 10V)
- On-State Resistance (RDS(ON)) < 36 mΩ (VGS = 4.5 V)
Applications
AI Translation
- PWM applications
- Load switching
- Mobile phone battery charging
C48678026 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



