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Infineon IAUZN10S7L289ATMA1
| Producent | |
| Nr części prod. | IAUZN10S7L289ATMA1 |
| Nr LCSC | C48017472 |
| Opak. | SON-8 |
| Numer Klienta | |
| Klucz. cechy | 45W 100V 27A 1.6V 25.8mΩ@10V 1 N-channel N-Channel SON-8 Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  Infineon IAUZN10S7L289ATMA1 |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SON-8 | |
| Output Capacitance(Coss) | 180pF | |
| Pd - Power Dissipation | 45W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 27A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 25.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 428pF | |
| Gate Charge(Qg) | 10.9nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SON-8 | |
| Output Capacitance(Coss) | 180pF | |
| Pd - Power Dissipation | 45W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 27A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 25.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 428pF | |
| Gate Charge(Qg) | 10.9nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- OptiMOS™ Power MOSFET for automotive applications
- N-channel - Enhancement mode - Logic level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 rated at peak reflow temperature up to 260°C
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
Zastosowania
Tłumaczenie AI
- General automotive applications
Na stanie: 90
90 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.0779 | $ 2.08 |
| 10+ | $ 1.8066 | $ 18.07 |
| 30+ | $ 1.6588 | $ 49.76 |
| 100+ | $ 1.4898 | $ 148.98 |
| 500+ | $ 1.4151 | $ 707.55 |
| 1,000+ | $ 1.381 | $ 1381.00 |
Standardowa Obudowa5000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SON-8 | |
| Output Capacitance(Coss) | 180pF | |
| Pd - Power Dissipation | 45W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 27A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 25.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 428pF | |
| Gate Charge(Qg) | 10.9nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SON-8 | |
| Output Capacitance(Coss) | 180pF | |
| Pd - Power Dissipation | 45W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 27A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 25.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 428pF | |
| Gate Charge(Qg) | 10.9nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- OptiMOS™ Power MOSFET for automotive applications
- N-channel - Enhancement mode - Logic level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 rated at peak reflow temperature up to 260°C
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
Zastosowania
Tłumaczenie AI
- General automotive applications
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IAUCN10S7L180ATMA1 | Infineon | PG-TDSON-8 | 450 | $ 1.4121 | ||
| IAUZ30N10S5L240 | Infineon | TSDSON-8FL | 73 | $ 1.1763 | ||
| ISC230N10NM6ATMA1 | Infineon | TDSON-8FL | 416 | $ 1.3785 | ||
| BSZ096N10LS5 | Infineon | TSDSON-8FL | 3,346 | $ 1.9139 | ||
| ISC0802NLSATMA1 | Infineon | TDSON-8 | 330 | $ 1.7564 | ||
| IAUC26N10S5L245ATMA1 | Infineon | TDSON-8-33 | 71 | $ 2.3151 | ||
| ISC032N12LM6ATMA1 | Infineon | PG-TDSON-8FL | 1 | $ 4.7017 | ||
| ISZ0804NLSATMA1 | Infineon | TSDSON-8 | 0 | $ 1.3696 | ||
| ISZ230N10NM6ATMA1 | Infineon | TSDSON-8FL | 0 | $ 1.0642 | ||
| ISC0803NLSATMA1 | Infineon | TDSON-8 | 0 | $ 4.419 |