Nexperia PMZ600UNELYL
| Manufacturer | |
| MPN | PMZ600UNELYL |
| LCSC Part # | C478224 |
| Packaging | DFN1006-3L |
| Customer # | |
| Key Attributes | 20V 600mA 950mV 715mW 470mΩ@4.5V 1 N-channel DFN1006-3L Single FETs, MOSFETs RoHS |
| Datasheet | |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 715mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 21.3pF | |
| Gate Charge(Qg) | 700pC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 715mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 21.3pF | |
| Gate Charge(Qg) | 700pC@4.5V |
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Introduction
AI Translation
N-channel enhancement mode FET using trench MOSFET technology, housed in a leadless ultra-compact DFN1006-3 (SOT883) SMD plastic package.
Features
AI Translation
- Low leakage current
- Leadless ultra-small SMD plastic package: 1.0 x 0.6 x 0.48 mm
- ESD protection > 1 kV HBM
- Drain-source on-state resistance RDSon = 470 mΩ
Applications
AI Translation
- Relay driver - High-speed line driver - Low-side load switch - Switching circuit
In-Stock: 8,870
8,870 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1248 | $ 0.62 |
| 50+ | $ 0.1 | $ 5.00 |
| 150+ | $ 0.0876 | $ 13.14 |
| 500+ | $ 0.0783 | $ 39.15 |
| 2,500+ | $ 0.0709 | $ 177.25 |
| 5,000+ | $ 0.0672 | $ 336.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 715mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 21.3pF | |
| Gate Charge(Qg) | 700pC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 715mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF | |
| RDS(on) | 470mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 21.3pF | |
| Gate Charge(Qg) | 700pC@4.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel enhancement mode FET using trench MOSFET technology, housed in a leadless ultra-compact DFN1006-3 (SOT883) SMD plastic package.
Features
AI Translation
- Low leakage current
- Leadless ultra-small SMD plastic package: 1.0 x 0.6 x 0.48 mm
- ESD protection > 1 kV HBM
- Drain-source on-state resistance RDSon = 470 mΩ
Applications
AI Translation
- Relay driver - High-speed line driver - Low-side load switch - Switching circuit
C478224 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PMZB600UNEYL | Nexperia | SOT-883-3 | 34,060 | $ 0.0488 | ||
| PMZ600UNEYL | Nexperia | SOT-883 | 3,460 | $ 0.0314 | ||
| DMN3730UFB4-7 | DIODES | X2-DFN1006-3 | 640 | $ 0.1602 | ||
| DMN3730UFB4-7B | DIODES | X2-DFN1006-3 | 20 | $ 0.4598 | ||
| DMN2710UFBQ-7 | DIODES | X1-DFN1006-3 | 1 | $ 0.3022 | ||
| PMZ290UNE2YL | Nexperia | DFN1006-3L | 8,630 | $ 0.0717 | ||
| PMZ600UNEZ | Nexperia | SOT-883 | 0 | $ 0.0897 | ||
| PMZB290UNE,315 | Nexperia | X1-DFN1006-3 | 0 | $ 0.0997 | ||
| PMZB600UNELYL | Nexperia | SOT-883-3 | 0 | $ 0.1186 | ||
| DMN3730UFB-7 | DIODES | X1-DFN1006-3 | 0 | $ 0.2005 |



