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Nexperia PMZB350UPE,315RoHS

Manufacturer
Nexperia
MPN
PMZB350UPE,315
LCSC Part #
C478140
Packaging
X1-DFN1006-3
Customer #
Key Attributes
MOSFET P-CH 20V X1-DFN1006-3
Datasheetpdf iconNexperia PMZB350UPE,315
In-Stock: 10
10 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0613$ 0.61
100+$ 0.0486$ 4.86
300+$ 0.0422$ 12.66
1,000+$ 0.0375$ 37.50
5,000+$ 0.0337$ 168.50
10,000+$ 0.0318$ 318.00
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNexperia
PackagingX1-DFN1006-3
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)1.4A
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)450mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)127pF
Gate Charge(Qg)1.3nC@4.5V
TypeP-Channel
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Introduction

AI Translation

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

AI Translation
  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • 1.8 kV ESD protected

Applications

AI Translation
  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits