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Bestirpower BMD60N650UC1Z
| Manufacturer | BestirpowerAsian Brands |
| MPN | BMD60N650UC1Z |
| LCSC Part # | C47715868 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 600V 8A 4V 62.5W 650mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet |  Bestirpower BMD60N650UC1Z |
| Alternative Parts | 9 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 406pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 406pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
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Introduction
AI Translation
BMx60N650UC1Z is a power MOSFET utilizing Bestirpower's advanced super-junction technology to achieve ultra-low on-resistance and gate charge. By employing optimized charge-coupling technology, it delivers higher efficiency. These user-friendly devices offer designers low EMI advantages along with low switching losses.
Features
AI Translation
- Ultra-fast body diode.
- Extremely low FOM (Rdson*Qg and Eoss) for minimal losses.
- Extremely high commutation robustness.
- High ESD robustness.
Applications
AI Translation
- Power Factor Correction (PFC)
- Adapters
- LCD TV
- LED Lighting
- UPS
In-Stock: 30
30 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4205 | $ 0.42 |
| 10+ | $ 0.3328 | $ 3.33 |
| 30+ | $ 0.2939 | $ 8.82 |
| 90+ | $ 0.2468 | $ 22.21 |
| 510+ | $ 0.2257 | $ 115.11 |
| 990+ | $ 0.2143 | $ 212.16 |
Standard Packaging30/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 406pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 406pF | |
| Gate Charge(Qg) | 15nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
BMx60N650UC1Z is a power MOSFET utilizing Bestirpower's advanced super-junction technology to achieve ultra-low on-resistance and gate charge. By employing optimized charge-coupling technology, it delivers higher efficiency. These user-friendly devices offer designers low EMI advantages along with low switching losses.
Features
AI Translation
- Ultra-fast body diode.
- Extremely low FOM (Rdson*Qg and Eoss) for minimal losses.
- Extremely high commutation robustness.
- High ESD robustness.
Applications
AI Translation
- Power Factor Correction (PFC)
- Adapters
- LCD TV
- LED Lighting
- UPS
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BMD60N650UC1 | Bestirpower | TO-252 | 219 | $ 0.3861 | ||
| BMD60N600C1 | Bestirpower | DPAK | 110 | $ 0.3567 | ||
| BMD65N380C1 | Bestirpower | TO-252 | 108 | $ 0.4602 | ||
| BMD65N380E2 | Bestirpower | DPAK | 102 | $ 0.4172 | ||
| BMD65N360E2 | Bestirpower | DPAK | 55 | $ 0.4634 | ||
| BMD70N360E2 | Bestirpower | DPAK | 158 | $ 0.5475 | ||
| BMD65N340E2 | Bestirpower | DPAK | 30 | $ 0.4606 | ||
| BMD80N400E1 | Bestirpower | DPAK | 0 | $ 0.7192 | ||
| BMD60N190C1 | Bestirpower | DPAK | 0 | $ 0.7679 |