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Bestirpower BCW65N45M1RoHS

Manufacturer
BestirpowerAsian Brands
MPN
BCW65N45M1
LCSC Part #
C47715867
Packaging
TO-247
Customer #
Key Attributes
N-Channel Silicon Carbide Power MOSFET
Datasheetpdf iconBestirpower BCW65N45M1
In-Stock: 602
602 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.8263$ 2.83
10+$ 2.3555$ 23.56
30+$ 2.0617$ 61.85
90+$ 1.7597$ 158.37
510+$ 1.6234$ 827.93
990+$ 1.5633$ 1547.67
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerBestirpower
PackagingTO-247
Operating Temperature-55℃~+175℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)42A
Output Capacitance(Coss)131pF
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation150W
RDS(on)45mΩ
Reverse Transfer Capacitance (Crss@Vds)9.1pF
Number1 N-channel
Input Capacitance(Ciss)1.048nF
Gate Charge(Qg)56nC
TypeN-Channel
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Features

AI Translation
  • High switching speed with low gate charge
  • Fast intrinsic diode with low reverse recovery
  • Robust avalanche capability
  • 100% avalanche tested
  • Halogen-free and RoHS compliant

Applications

AI Translation
  • Solar inverters / energy storage systems / UPS
  • EV charging stations
  • Server and telecom power supplies
  • Industrial power supplies