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Truesemi TSA35N50M

Manufacturer
TruesemiAsian Brands
MPN
TSA35N50M
LCSC Part #
C47355606
Packaging
TO-3P
Customer #
Key Attributes
MOSFET N-CH 500V 35A TO-3P
Datasheetpdf iconTruesemi TSA35N50M
In-Stock: 51
51 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.8388$ 1.84
10+$ 1.5708$ 15.71
30+$ 1.4019$ 42.06
90+$ 1.2297$ 110.67
510+$ 1.1517$ 587.37
990+$ 1.1176$ 1106.42
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTruesemi
PackagingTO-3P
Drain to Source Voltage500V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)520pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
RDS(on)155mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)6.97nF
Gate Charge(Qg)142nC@10V
TypeN-Channel
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Introduction

AI Translation

This power MOSFET is manufactured using Truesemi's advanced planar strip DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes.

Features

AI Translation
  • 35A, 500V, max R<sub>DS(on)</sub> = 0.155Ω
  • Low gate charge: Q<sub>g</sub> = 142nC (typical)
  • 100% avalanche tested
  • RoHS compliant device

Applications

AI Translation
  • Motor driver
  • Battery protection
  • Power distribution