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ST PD57060-E
| Manufacturer | |
| MPN | PD57060-E |
| LCSC Part # | C472657 |
| Packaging | PowerSO-10RF |
| Customer # | |
| Key Attributes | MOSFET N-CH 65V 7A PowerSO-10RF |
| Datasheet |  ST PD57060-E |
| RoHS Compliance | 2 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10RF | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 7A | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 83pF | |
| Output Capacitance(Coss) | 58pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10RF | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 7A | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 83pF | |
| Output Capacitance(Coss) | 58pF |
Introduction
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Features
- Excellent thermal stability
- Common source configuration
- P0UT = 60 W with 14.3dB gain @ 945 MHz/28 V
- New RF plastic package
Applications
- Commercial and industrial applications
- Base station applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 114.2972 | $ 114.30 |
| 10+ | $ 111.6604 | $ 1116.60 |
Standard Packaging400/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10RF | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 7A | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 83pF | |
| Output Capacitance(Coss) | 58pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerSO-10RF | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | 7A | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 83pF | |
| Output Capacitance(Coss) | 58pF |
Introduction
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Features
- Excellent thermal stability
- Common source configuration
- P0UT = 60 W with 14.3dB gain @ 945 MHz/28 V
- New RF plastic package
Applications
- Commercial and industrial applications
- Base station applications
C472657 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |