pSemi PE42553B-Z
| Manufacturer | |
| MPN | PE42553B-Z |
| LCSC Part # | C471160 |
| Packaging | QFN-16-EP(3x3) |
| Customer # | |
| Key Attributes | UltraCMOSSPDTRFSwitch,9kHz-8GHz |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~8GHz | |
| Features | Integrated control logic;Integrated ESD protection | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~8GHz |
| Type | Description | |
|---|---|---|
| Features | Integrated control logic;Integrated ESD protection | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42553 is a HaRPTM technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE) and other high performance wireless applications. The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- Excellent power handling: 36 dBm CW and 38 dBm pulsed power in 50Ω @ 8 GHz High linearity: IIP3 of 66 dBm
- High isolation: 45 dB @ 3 GHz, 41 dB @ 8 GHz
- HaRP technology enhanced: Fast settling time, No gate and phase lag, No drift in insertion loss and phase
- High ESD performance: 2.5 kV HBM on all pins, 4 kV HBM on RF pins to GND, 1 kV CDM on all pins
- Packaging: 16-lead 3×3 mm QFN
Applications
- Test and measurement: Signal sources, Communication testers, Spectrum analyzers, Network analyzers
- Automated test equipment
- General purpose TX/RX switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.4553 | $ 4.46 |
| 10+ | $ 3.8087 | $ 38.09 |
| 30+ | $ 3.4239 | $ 102.72 |
| 100+ | $ 3.0359 | $ 303.59 |
| 500+ | $ 2.8565 | $ 1428.25 |
| 1,000+ | $ 2.7757 | $ 2775.70 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~8GHz | |
| Features | Integrated control logic;Integrated ESD protection | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/RF Switches | |
| Manufacturer | pSemi | |
| Packaging | QFN-16-EP(3x3) | |
| Frequency range | 9kHz~8GHz |
| Type | Description | |
|---|---|---|
| Features | Integrated control logic;Integrated ESD protection | |
| Voltage - Supply | 2.3V~5.5V | |
| P1dB | - | |
| operating temperature | -40℃~+85℃ |
Introduction
The PE42553 is a HaRPTM technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE) and other high performance wireless applications. The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- Excellent power handling: 36 dBm CW and 38 dBm pulsed power in 50Ω @ 8 GHz High linearity: IIP3 of 66 dBm
- High isolation: 45 dB @ 3 GHz, 41 dB @ 8 GHz
- HaRP technology enhanced: Fast settling time, No gate and phase lag, No drift in insertion loss and phase
- High ESD performance: 2.5 kV HBM on all pins, 4 kV HBM on RF pins to GND, 1 kV CDM on all pins
- Packaging: 16-lead 3×3 mm QFN
Applications
- Test and measurement: Signal sources, Communication testers, Spectrum analyzers, Network analyzers
- Automated test equipment
- General purpose TX/RX switch
C471160 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



