pSemi PE43205B-Z
| Manufacturer | |
| MPN | PE43205B-Z |
| LCSC Part # | C470906 |
| Packaging | QFN-12-EP(3x3) |
| Customer # | |
| Key Attributes | 2-bit 18dB 35-6000MHz RF Digital Attenuator |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/Attenuators | |
| Manufacturer | pSemi | |
| Packaging | QFN-12-EP(3x3) | |
| Attenuation Value | - |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/Attenuators | |
| Manufacturer | pSemi |
| Type | Description | |
|---|---|---|
| Packaging | QFN-12-EP(3x3) | |
| Attenuation Value | - |
Introduction
The PE43205 is a 50Ω, HaRP technology-enhanced fast switching 2-bit RF Digital Step Attenuator (DSA) designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This DSA is a pin-compatible upgraded version of the PE43204 with a wider frequency and power supply range, and extended operating temperature range. Covering an 18 dB attenuation range in 6 dB and 12 dB steps, it maintains high RF performance and low power consumption from 35 MHz through 6 GHz. PE43205 is offered in a 12-lead 3x3 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE43205 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- Attenuation: 6 dB / 12 dB steps to 18 dB
- Fast switching time of 29 ns
- Low attenuation error: 0.10 dB @ 2 GHz; 0.15 dB @ 3 GHz
- High linearity: +61 dBm IIP3 @ 1950 MHz
- Wide supply range of 2.3V to 5.5V
- 1.8V control logic compatible
- 105℃ operating temperature
- ESD performance: 2kV HBM on all pins; 100V MM on all pins; 1 kV CDM on all pins
- Parallel control
Applications
- 3G/4G wireless infrastructure
- Other high performance RF applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.9349 | $ 2.93 |
| 10+ | $ 2.4989 | $ 24.99 |
| 30+ | $ 2.2386 | $ 67.16 |
| 100+ | $ 1.9767 | $ 197.67 |
| 500+ | $ 1.8563 | $ 928.15 |
| 1,000+ | $ 1.8026 | $ 1802.60 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/Attenuators | |
| Manufacturer | pSemi | |
| Packaging | QFN-12-EP(3x3) | |
| Attenuation Value | - |
| Type | Description | |
|---|---|---|
| Category | RF and Wireless/Attenuators | |
| Manufacturer | pSemi |
| Type | Description | |
|---|---|---|
| Packaging | QFN-12-EP(3x3) | |
| Attenuation Value | - |
Introduction
The PE43205 is a 50Ω, HaRP technology-enhanced fast switching 2-bit RF Digital Step Attenuator (DSA) designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This DSA is a pin-compatible upgraded version of the PE43204 with a wider frequency and power supply range, and extended operating temperature range. Covering an 18 dB attenuation range in 6 dB and 12 dB steps, it maintains high RF performance and low power consumption from 35 MHz through 6 GHz. PE43205 is offered in a 12-lead 3x3 mm QFN package. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports. The PE43205 is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
Features
- Attenuation: 6 dB / 12 dB steps to 18 dB
- Fast switching time of 29 ns
- Low attenuation error: 0.10 dB @ 2 GHz; 0.15 dB @ 3 GHz
- High linearity: +61 dBm IIP3 @ 1950 MHz
- Wide supply range of 2.3V to 5.5V
- 1.8V control logic compatible
- 105℃ operating temperature
- ESD performance: 2kV HBM on all pins; 100V MM on all pins; 1 kV CDM on all pins
- Parallel control
Applications
- 3G/4G wireless infrastructure
- Other high performance RF applications
C470906 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8517799000 |
| USHTS | 8517790000 |
| TARIC | 8517790000 |
| CAHTS | 8517790000 |
| BRHTS | 85177900 |
| INHTS | 85177990 |
| MXHTS | 8517.70.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8517799000 |
| USHTS | 8517790000 |
| TARIC | 8517790000 |
| Type | Details |
|---|---|
| CAHTS | 8517790000 |
| BRHTS | 85177900 |
| INHTS | 85177990 |
| MXHTS | 8517.70.99 |



