Infineon IPW60R099CM8XKSA1
| Manufacturer | |
| MPN | IPW60R099CM8XKSA1 |
| LCSC Part # | C46642983 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 176W 600V 29A 4.2V 83mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 29A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Built on Infineon's world-class superjunction MOSFET platform, this product integrates a fast body diode and is suited for a wide range of applications. It delivers maximum power density at minimum system cost with outstanding reliability. This product enhances Infineon's wide bandgap semiconductor portfolio and is the successor to the 600V CoolMOS™ 7 MOSFET series.
Features
AI Translation
- Best-in-class SJ MOSFET performance for a wide range of hard-switching and soft-switching applications with excellent commutation robustness
- Integrated fast body diode and ESD protection
- XT interconnect technology for best-in-class thermal performance
Applications
AI Translation
- Data centers, AI servers, telecom power supplies
- Micro and residential hybrid inverters
- Portable and residential energy storage, UPS
- EV charging, light electric vehicles, electric forklifts
- High-voltage solid-state power distribution
- Home and professional tools
In-Stock: 5
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 6.2776 | $ 6.28 |
| 10+ | $ 5.605 | $ 56.05 |
| 30+ | $ 5.2053 | $ 156.16 |
| 90+ | $ 4.8008 | $ 432.07 |
| 510+ | $ 4.614 | $ 2353.14 |
| 990+ | $ 4.5295 | $ 4484.21 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 29A | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Output Capacitance(Coss) | 18pF | |
| Pd - Power Dissipation | 176W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 29A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 83mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.33nF | |
| Gate Charge(Qg) | 31nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Built on Infineon's world-class superjunction MOSFET platform, this product integrates a fast body diode and is suited for a wide range of applications. It delivers maximum power density at minimum system cost with outstanding reliability. This product enhances Infineon's wide bandgap semiconductor portfolio and is the successor to the 600V CoolMOS™ 7 MOSFET series.
Features
AI Translation
- Best-in-class SJ MOSFET performance for a wide range of hard-switching and soft-switching applications with excellent commutation robustness
- Integrated fast body diode and ESD protection
- XT interconnect technology for best-in-class thermal performance
Applications
AI Translation
- Data centers, AI servers, telecom power supplies
- Micro and residential hybrid inverters
- Portable and residential energy storage, UPS
- EV charging, light electric vehicles, electric forklifts
- High-voltage solid-state power distribution
- Home and professional tools
C46642983 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

