JSMSEMI STP10NK70ZFP-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | STP10NK70ZFP-JSM |
| LCSC Part # | C46628677 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 800V 10A TO-220F |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 240W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 58nC@400V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 240W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 58nC@400V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
AGM60P12D combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). The device is ideal for load switch and battery protection applications.
Features
AI Translation
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- 100% Avalanche Tested
- BVDSS = 800V, ID = 10A
- RDs(on): 1.0 Ω (Max) @ vG = 10V
- Unrivalled Gate Charge: Qg = 44nC (Typ.)
Applications
AI Translation
- MB/VGA core voltage
- Secondary synchronous rectifier in switching power supplies
- Point-of-load applications
- Brushless DC motor drivers
In-Stock: 55
55 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7404 | $ 0.74 |
| 10+ | $ 0.594 | $ 5.94 |
| 50+ | $ 0.5215 | $ 26.08 |
| 100+ | $ 0.4588 | $ 45.88 |
| 500+ | $ 0.4153 | $ 207.65 |
| 1,000+ | $ 0.3928 | $ 392.80 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 240W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 58nC@400V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 800V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 230pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 240W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.8nF | |
| Gate Charge(Qg) | 58nC@400V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
AGM60P12D combines advanced trench MOSFET technology with a low-resistance package to achieve extremely low RDS(ON). The device is ideal for load switch and battery protection applications.
Features
AI Translation
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- 100% Avalanche Tested
- BVDSS = 800V, ID = 10A
- RDs(on): 1.0 Ω (Max) @ vG = 10V
- Unrivalled Gate Charge: Qg = 44nC (Typ.)
Applications
AI Translation
- MB/VGA core voltage
- Secondary synchronous rectifier in switching power supplies
- Point-of-load applications
- Brushless DC motor drivers
C46628677 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



